unisonic technologies co., ltd utt36n05 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-654.b 36a, 50v n-ch a nnel enhancement mode power mosfet transistor ? description the utc utt36n05 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc utt36n05 is suitable for motor control, ac-dc or dc-dc converters and audio amplifiers, etc. ? features * r ds(on) < 40m ? @ v gs =5v * high switching speed * high current capacity ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - UTT36N05G-AA3-T sot-223 g d s tube utt36n05l-ta3-t utt36n05g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source ? marking sot-223 to-220
utt36n05 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-654.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (v gs =0) v dss 50 v drain-gate voltage (r gs =20k ? ) v dgr 50 v gate-source voltage v gss 15 v drain current continuous t c =25c i d 36 a t c =100c 25 a pulsed (note 2) i dm 144 a avalanche energy single pulsed e as 240 mj repetitive e ar 60 mj power dissipation (t c =25c) sot-223 p d 11 w to-220 100 w junction temperature t j 150 c storage temperature t stg -65~175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area. ? thermal data parameter symbol ratings unit junction to ambient sot-223 ja 150 c/w to-220 62.5 junction to case sot-223 jc 11 c/w to-220 1.25
utt36n05 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-654.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v drain-source leakage current i dss v ds =max rating, v gs =0v 1 a v ds = max 0.8,t c =125c,v gs =0v 10 gate- source leakage current forward i gss v gs =+15v, v ds =0v +100 na reverse v gs =-15v, v ds =0v -100 na on characteristics (note 1) gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 1.6 2.5 v static drain-source on-state resistance r ds ( on ) v gs =5v, i d =18a 0.033 0.04 ? on state drain current i d ( on ) v ds >i d ( on ) r ds ( on ) max, v gs =10v 36 a dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1000 1800 pf output capacitance c oss 133 600 pf reverse transfer capacitance c rss 90 200 pf switching parameters turn-on delay time t d ( on ) v dd =30v, i d =1.0a, r g =50 ? 40 60 ns rise time t r 60 100 ns off-voltage rise time t r ( voff ) 350 420 ns fall-time t f 125 160 ns total gate charge q g v gs =5v, v ds =40v, i d =36a 76 nc gate to source charge q gs 11 nc gate to drain charge q gd 11 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s 36 a maximum body-diode pulsed current i sm (note 2) 144 a drain-source diode forward voltage v sd i sd =36a, v gs =0v (note 1) 1.6 v notes: 1. pulsed: pulse duration = 300 ms, duty cycle 1.5% 2. pulse width limited by safe operating area.
utt36n05 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-654.b ? test circuits and waveforms gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms unclamped inductive switching test circuit unclamped inductive switching waveforms
utt36n05 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-654.b ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
utt36n05 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-654.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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